Enhanced stability of Bi-doped Ge2Sb2Te5 amorphous films

S. Dyussembayev; O. Prikhodko; K. Tsendin; S. Timoshenkov; N. Korobova

doi:10.1117/12.2059257

16 September 2014 Enhanced stability of Bi-doped Ge₂Sb₂Te₅ amorphous films

S. Dyussembayev, O. Prikhodko, K. Tsendin, S. Timoshenkov, N. Korobova

Proceedings Volume 9200, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VIII; 920014 (2014) https://doi.org/10.1117/12.2059257
Event: SPIE Optical Engineering + Applications, 2014, San Diego, California, United States

Abstract

Although, several reviews have appeared on various physical properties and applications of chalcogenide glasses, there is no thorough study of local atomic structure and its modification for eutectic Ge-Sb-Te alloys doped with Bi. Ge₂Sb₂Te₅ pure and Bi-doped films were deposited by ion-plasma sputtering method of synthesized GTS material on Si (100) and glass substrates coated with a conductive Al layer which was used as a bottom electrode. Current–voltage characteristics of different points of the same samples have been measured. Random distribution of inclusions within the sample made it possible to investigate the dependence of switching and memory effects on the phase composition at a constant value of other parameters. Measurements in the current controlled mode clearly showed that the memory state formation voltage does not depend on current in a wide range. Results indicate that the development of imaging technologies phase memory cells need to pay special attention to the conditions of Ge-Sb-Te film preparation. To increase the number of cycles “write – erase” should be additional prolonged annealing of the synthesized films.

Citation Download Citation

S. Dyussembayev, O. Prikhodko, K. Tsendin, S. Timoshenkov, and N. Korobova "Enhanced stability of Bi-doped Ge₂Sb₂Te₅ amorphous films", Proc. SPIE 9200, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VIII, 920014 (16 September 2014); https://doi.org/10.1117/12.2059257

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