Effect of amplitude roughness on EUV mask specifications

Rene A. Claus; Andrew R. Neureuther; Patrick P. Naulleau; Laura Waller

doi:10.1117/12.2069073

8 October 2014 Effect of amplitude roughness on EUV mask specifications

Rene A. Claus, Andrew R. Neureuther, Patrick P. Naulleau, Laura Waller

Proceedings Volume 9235, Photomask Technology 2014; 92351A (2014) https://doi.org/10.1117/12.2069073
Event: SPIE Photomask Technology, 2014, Monterey, California, United States

Abstract

The importance of partitioning scatterometry data from EUV multilayer mask blanks into amplitude and phase roughness on meeting LWR specifications is examined using thin mask simulations. Scatterometry measurements are unable to determine whether the scattering is due to phase or reflectivity variations. We show that if a fraction of the scattering is due to amplitude roughness there can be a significant impact on the total amount of scatter permitted to meet the LWR specification.

Citation Download Citation

Rene A. Claus, Andrew R. Neureuther, Patrick P. Naulleau, and Laura Waller "Effect of amplitude roughness on EUV mask specifications", Proc. SPIE 9235, Photomask Technology 2014, 92351A (8 October 2014); https://doi.org/10.1117/12.2069073

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available