Mask aligner lithography for TSV-structures using a double-sided (structured) photomask

T. Weichelt; L. Stuerzebecher; U. D. Zeitner

doi:10.1117/12.2077550

13 March 2015 Mask aligner lithography for TSV-structures using a double-sided (structured) photomask

T. Weichelt, L. Stuerzebecher, U. D. Zeitner

Proceedings Volume 9374, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VIII; 93740X (2015) https://doi.org/10.1117/12.2077550
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Through-silicon vias (TSV) are important for wafer level packaging (WLP) as they provide patterning holes through thick silicon dies to integrate and interconnect devices which are stacked in z-direction. For economic processing TSV fabrication primarily needs to be cost-effective including especially a high throughput. Furthermore, a lithography process for TSV has to be stable enough to allow patterning on pre-structured substrates with inhomogeneous topography. This can be addressed by an exposure process which offers a large depth of focus. We have developed a mask-aligner lithography process based on the use of a double-sided photomask to realize aerial images which meet these constraints.

Citation Download Citation

T. Weichelt, L. Stuerzebecher, and U. D. Zeitner "Mask aligner lithography for TSV-structures using a double-sided (structured) photomask", Proc. SPIE 9374, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics VIII, 93740X (13 March 2015); https://doi.org/10.1117/12.2077550

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KEYWORDS

Photomasks

Lithography

Binary data

Photoresist materials

Chromium

Electron beam lithography

Optical alignment

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