Paper
16 March 2015 First results of outgas resist family test and correlation between outgas specifications and EUV resist development
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Abstract
In this paper, we present the first results of witness sample based outgas resist family test to improve the efficiency of outgas testing using EUV resists that have shown proven imaging performance. The concept of resist family testing is to characterize the boundary conditions of outgassing scale from three major components for each resist family. This achievement can significantly reduce the cost and improve the resist outgas learning cycle. We also report the imaging performance and outgas test results of state of the art resists and discuss the consequence of the resist development with recent change of resist outgassing specifications. Three chemically amplified resists selected from higher outgassing materials are investigated, but no significant improvement in resist performance is observed.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu-Jen Fan, Ken Maruyama, Ramakrishnan Ayothi, Takehiko Naruoka, Tonmoy Chakraborty, Dominic Ashworth, Jun Sung Chun, Cecilia Montgomery, Shih-Hui Jen, Mark Neisser, and Kevin Cummings "First results of outgas resist family test and correlation between outgas specifications and EUV resist development", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942211 (16 March 2015); https://doi.org/10.1117/12.2087424
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Cited by 1 scholarly publication.
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KEYWORDS
Extreme ultraviolet

Contamination

Extreme ultraviolet lithography

Chemically amplified resists

Line edge roughness

Line width roughness

Semiconducting wafers

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