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We use a double exposure method, previously described by Minghetti [1] et al. to isolate and measure intra-field overlay distortions caused by tool lens signatures and different illumination conditions. A full field test reticle is used to create a dual level expose pattern. The same pattern is exposed twice, but with two different illumination conditions. The first exposure is done with a standard reference illumination. The second exposure is the target illumination condition. The test reticle has overlay target pairs that are measurable when the 2nd exposure is offset in the Y direction by the designed amount. This allows for a high density, 13x13, intra-field overlay measurement to be collected and modeled to determine 2nd and 3rd order intra-field terms. Since the resulting illumination and scanner lens specific intra field corrections are independent of field size, the sub-recipes can be applied to any product exposure independent of field size, which use the same illumination conditions as the test exposures. When the method is applied to all exposure levels in a product build cycle, the overlay errors contributed by the reference illumination condition cancel out. The remaining errors are due exclusively to the impact of the illumination condition on that scanner lens. Actual results correlated well with the model with more than 80% of the predicted overlay improvement being achieved. |
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CITATIONS
Cited by 2 scholarly publications.
Overlay metrology
Scanners
Distortion
Reticles
Semiconducting wafers
Optical lithography
Photomasks
