Carrier Lifetimes In A Hetero N-I-P-I Structure.

A. Kost; E. Garmire; A. Danner; H. C. Lee; P. D. Dapkus

doi:10.1117/12.947302

18 August 1988 Carrier Lifetimes In A Hetero N-I-P-I Structure.

A. Kost, E. Garmire, A. Danner, H. C. Lee, P. D. Dapkus

Proceedings Volume 0943, Quantum Well and Superlattice Physics II; (1988) https://doi.org/10.1117/12.947302
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We discuss new studies of a multiple quantum well hetero n-i-p-i structure which combines the advantages of multiple quantum wells and doping superlattices. The structure exhibits large changes in its absorption coefficient for intensities of only a few mW/cm2. We have used the spectral dependence of the nonlinear absorption coefficient to deduce photogenerated carrier lifetimes as a function of intensity.

Citation Download Citation

A. Kost, E. Garmire, A. Danner, H. C. Lee, and P. D. Dapkus "Carrier Lifetimes In A Hetero N-I-P-I Structure.", Proc. SPIE 0943, Quantum Well and Superlattice Physics II, (18 August 1988); https://doi.org/10.1117/12.947302

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