TaNx and Ta/graded Ta(N)/TaN multilayer diffusion barriers

I. Khorin; A. Rogozhin; N. Orlikovsky; V. Kalnov

doi:10.1117/12.2180901

18 December 2014 TaN_x and Ta/graded Ta(N)/TaN multilayer diffusion barriers

I. Khorin, A. Rogozhin, N. Orlikovsky, V. Kalnov

Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944009 (2014) https://doi.org/10.1117/12.2180901
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation

Abstract

A study of copper (Cu) diffusion into silicon substrates through TaN_x and Ta/graded Ta(N)/TaN multilayer diffusion barriers was investigated based on an experimental approach. TaN_x and Ta/graded Ta(N)/TaN thin films were deposited by magnetron sputtering under argon (Ar) and Ar-nitrogen (N) plasma. The influence of the N₂ partial pressure on the microstructure and the electrical properties is reported. The efficiency of TaN_x layers and Ta/graded Ta(N)/TaN multilayer diffusion barriers was investigated after annealing at temperatures between 300 and 600◦C in Ar.

Citation Download Citation

I. Khorin, A. Rogozhin, N. Orlikovsky, and V. Kalnov "TaN_x and Ta/graded Ta(N)/TaN multilayer diffusion barriers", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944009 (18 December 2014); https://doi.org/10.1117/12.2180901

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available