Simulation of devices based on carbon nanotubes and graphene

I. I. Abramov; V. A. Labunov; N. V. Kolomejtseva; I. A. Romanova

doi:10.1117/12.2180112

18 December 2014 Simulation of devices based on carbon nanotubes and graphene

I. I. Abramov, V. A. Labunov, N. V. Kolomejtseva, I. A. Romanova

Author Affiliations +

Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944017 (2014) https://doi.org/10.1117/12.2180112
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation

Abstract

The simulation results of different devices based on carbon nanotubes (CNT) and graphene are described in the paper. The combined numerical model of hybrid integrated structures including resonant tunneling diode and field-effect transistor (RTD-FET) is proposed. Simulation of RTD-FET based on CNT of different types (chirality) was realized with the use of the developed model. The technique of express simulation of nanoradio based on CNT of the type I (based on only single CNT) and of the type II (hybrid radio) is developed. Proposed models can be used for calculation of nanoradio characteristics such as: 1) resonant frequency of CNT; 2) oscillation amplitude of СNT; 3) CNT IV-characteristics depending on different factors. Results of device simulation based on single-wall and multi-wall СNT are given in the paper. IV-characteristics of nanoscale resonant tunneling structure based on graphene-on-SiC were calculated. As well as it was investigated the influence of different parameters on the electrical characteristic of graphene-based nanostructures.

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I. I. Abramov, V. A. Labunov, N. V. Kolomejtseva, and I. A. Romanova "Simulation of devices based on carbon nanotubes and graphene", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944017 (18 December 2014); https://doi.org/10.1117/12.2180112

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