Growth-Induced Complex Defects In GaAs Grown By Molecular Beam Epitaxy

A. C. Beye; G. Neu; J. P. Contour; J. C. Garcia; B. Gil

doi:10.1117/12.947427

9 August 1988 Growth-Induced Complex Defects In GaAs Grown By Molecular Beam Epitaxy

A. C. Beye, G. Neu, J. P. Contour, J. C. Garcia, B. Gil

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947427
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Photoluminescence, excitation and magneto-optical experiments are performed on GaAs/GaAs(001) layers grown by molecular beam epitaxy. Attention is paid to the growth-induced complex defects, particularly their related excitonic-emissions in the 1.504-1.511 eV region (g-v band). The influence of growth conditions on the incorporation of residual impurities is examined. It is shown that the shallow acceptor responsible for the bound exciton (BE) line around 1.511 eV (g line) involves the majority acceptor species (C, Be). An acceptor-isoelectronic association model describes the properties of the g acceptor complex defect whose experimental binding energy is smaller than that of the involved C or Be single substitutional acceptor. Among the previously characterized isoelectronic-like complex defects having respectively Td, C3V, Cs and C2v symmetries, the simplest one in cubic symmetry is found to be present only in samples grown at temperatures lower than 580- 600°C).

Citation Download Citation

A. C. Beye, G. Neu, J. P. Contour, J. C. Garcia, and B. Gil "Growth-Induced Complex Defects In GaAs Grown By Molecular Beam Epitaxy", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947427

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