Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing

Sona Das; Utpal Das; Nutan Gautam; Sanjay Krishna

doi:10.1117/12.2178995

1 May 2015 Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing

Sona Das, Utpal Das, Nutan Gautam, Sanjay Krishna

Proceedings Volume 9516, Integrated Optics: Physics and Simulations II; 95160W (2015) https://doi.org/10.1117/12.2178995
Event: SPIE Optics + Optoelectronics, 2015, Prague, Czech Republic

Abstract

A 775 nm femto-second laser annealed approach for the inter-pixel isolation, without mesa etching, to reduce dark currents of type-II InAs/GaSb superlattice photodiodes is presented. A greater than two fold improvement of the pixel isolation and a corresponding reduction in the dark current are observed for laser annealed superlattice photodiodes with a 5.5 μm cutoff wavelength, operating at 10K. A higher band gap barrier material from the superlattice structure in the inter-pixel region is expected to form after femto-second laser annealing, which has been explained on the basis of a superlattice inter-diffusion model. The increase in inter-pixel barrier height at 10K is estimated to be ~ 4 meV in the laser annealed superlattice photodiodes.

Citation Download Citation

Sona Das, Utpal Das, Nutan Gautam, and Sanjay Krishna "Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing", Proc. SPIE 9516, Integrated Optics: Physics and Simulations II, 95160W (1 May 2015); https://doi.org/10.1117/12.2178995

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