A. Pavlov,1 E. Kitsyuk,2 R. Ryazanov,2 V. Timoshenkov,3 Y. Adamov3
1Institute of Nanotechnology in Microelectronics (Russian Federation) 2SMC Technological Ctr. (Russian Federation) 3National Research Univ. of Electronic Technology (Russian Federation)
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Photodetector based on carbon nanotubes (CNT) was investigated. Sensors were done on quartz and silicon
susbtrate. Samples of photodetectors sensors were produced by planar technology. This technology included deposition
of first metal layer (Al), lithography for pads formation, etching, and formation of local catalyst area by inverse
lithography. Vertically-aligned multi-wall carbon nanotubes were directly synthesized on substrate by PECVD method.
I-V analysis and spectrum sensitivity of photodetector were investigated for 0.4 μm - 1.2 μm wavelength. Resistivity of
CNT layers over temperature was detected in the range of -20°C to 100°C.
A. Pavlov,E. Kitsyuk,R. Ryazanov,V. Timoshenkov, andY. Adamov
"Photodetector based on carbon nanotubes", Proc. SPIE 9552, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII, 95520V (16 September 2015); https://doi.org/10.1117/12.2188176
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A. Pavlov, E. Kitsyuk, R. Ryazanov, V. Timoshenkov, Y. Adamov, "Photodetector based on carbon nanotubes," Proc. SPIE 9552, Carbon Nanotubes, Graphene, and Emerging 2D Materials for Electronic and Photonic Devices VIII, 95520V (16 September 2015); https://doi.org/10.1117/12.2188176