HgTe colloidal quantum dot LWIR infrared photodetectors

R. E. Pimpinella; A. Ciani; P. Guyot-Sionnest; C. Grein

doi:10.1117/12.2188333

26 August 2015 HgTe colloidal quantum dot LWIR infrared photodetectors

R. E. Pimpinella, A. Ciani, P. Guyot-Sionnest, C. Grein

Proceedings Volume 9553, Low-Dimensional Materials and Devices; 95530K (2015) https://doi.org/10.1117/12.2188333
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States

Abstract

The majority of modern infrared photon imaging devices are based on epitaxially grown bulk semiconductor materials. Colloidal quantum dot (CQD)-based infrared devices provide great promise for significantly reducing cost as well as significantly increased operating temperatures of infrared imaging systems. In addition, CQD-based infrared devices greatly benefit from band gap tuning by controlling the CQD size rather than the composition. In this work, we investigate the absorption coefficient of HgTe CQD films as a function of temperature and cutoff wavelength. The optical absorption properties are predicted for defect-free HgTe films as well as films which vary from ideal.

Conference Presentation

Citation Download Citation

R. E. Pimpinella, A. Ciani, P. Guyot-Sionnest, and C. Grein "HgTe colloidal quantum dot LWIR infrared photodetectors", Proc. SPIE 9553, Low-Dimensional Materials and Devices, 95530K (26 August 2015); https://doi.org/10.1117/12.2188333

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