High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector

Chong Li; ChunLai Xue; Zhi Liu; Hui Cong; Xia Guo; Buwen Cheng

doi:10.1117/12.2186742

28 August 2015 High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector

Chong Li, ChunLai Xue, Zhi Liu, Hui Cong, Xia Guo, Buwen Cheng

Proceedings Volume 9609, Infrared Sensors, Devices, and Applications V; 960908 (2015) https://doi.org/10.1117/12.2186742
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States

Abstract

A Ge-on-SOI uni-traveling carrier (UTC) photodetector was reported for high-power high-speed applications. The performances, in terms of dark-current, photocurrent responsivity and 3-dB bandwidth, were characterized for analog and coherent communications applications. The responsivity was 0.18 A/W at 1550 nm. The detector with a 40μmdiameter demonstrated an optical bandwidth of 2.72 GHz at -5V for 1550nm. The -1dB compression photocurrent at 1 GHz under -7V for 40μm-diameter device was about 16.24mA, the RF output power came to be 4.6 dBmw.

Citation Download Citation

Chong Li, ChunLai Xue, Zhi Liu, Hui Cong, Xia Guo, and Buwen Cheng "High-responsivity and high-saturation-current Si/Ge uni-traveling-carrier photodetector", Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 960908 (28 August 2015); https://doi.org/10.1117/12.2186742

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