We report on the influence of several AIMS parameters on the defect analysis including repair point. Under various illumination conditions with different patterns, it showed the significant correlation in defect analysis results. It is able to analyze defect under certain error budget based on the management specification required for each layer. In addition, it provided us with one of the clues in the analysis of wafer repeating defect. Finally we will present 'optimal specification' for defect management with common AIMS recipe and suggest advanced mask process flow. |
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Critical dimension metrology
Photomasks
Semiconducting wafers
Lithography
Lithographic illumination
Error analysis
Inspection