The ambipolar operation of lateral and vertical PbSe quantum dots field effect phototransistors

Haiting Zhang; Yating Zhang; Xiaoxian Song; Yu Yu; Mingxuan Cao; Yongli Che; Jianlong Wang; Haitao Dai; Guizhong Zhang; Jianquan Yao

doi:10.1117/12.2241950

25 October 2016 The ambipolar operation of lateral and vertical PbSe quantum dots field effect phototransistors

Haiting Zhang, Yating Zhang, Xiaoxian Song, Yu Yu, Mingxuan Cao, Yongli Che, Jianlong Wang, Haitao Dai, Guizhong Zhang, Jianquan Yao

Author Affiliations +

Proceedings Volume 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices; 96860E (2016) https://doi.org/10.1117/12.2241950
Event: Eighth International Symposium on Advanced Optical Manufacturing and Testing Technology (AOMATT2016), 2016, Suzhou, China

Abstract

We fabricate and investigate the photoelectrical characterization of PbSe QDs FEpTs Field Effect photo Transistors in lateral (LQFEpT) and vertical architectures (VQFEpT) respectively. Both LQFEpT and VQFEpT apply PbSe quantum dots as active layer, with different channel length of 0.1mm and 678nm respectively. The VQFEpT apply Au/Ag nanowires (NWs) as source transparent electrode connecting with Au source electrode. The ambipolar operation of both FEpTs show low power consumption, delivering high drain current at V_SD = V_G = ± 4 V. The VQFEpT exhibit higher photocurrent up to 4mA, three orders magnitude higher than that in LQFEpTs (16μA), owing to the superior carrier transportion in the shorter channel. As a result, higher photo responsivity (8×10⁴A/W), specific detectivity (2×10¹²Jones) and gain (1.3× 10⁵) are achieved in VQFEpT. The all-solution processing vertical architecture provide a convenient way for IR photo detectors with high performances.

Citation Download Citation

Haiting Zhang, Yating Zhang, Xiaoxian Song, Yu Yu, Mingxuan Cao, Yongli Che, Jianlong Wang, Haitao Dai, Guizhong Zhang, and Jianquan Yao "The ambipolar operation of lateral and vertical PbSe quantum dots field effect phototransistors", Proc. SPIE 9686, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 96860E (25 October 2016); https://doi.org/10.1117/12.2241950

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available