High density semiconductor nanodots by direct laser fabrication

Anahita Haghizadeh; Haeyeon Yang

doi:10.1117/12.2213172

9 March 2016 High density semiconductor nanodots by direct laser fabrication

Anahita Haghizadeh, Haeyeon Yang

Proceedings Volume 9737, Synthesis and Photonics of Nanoscale Materials XIII; 97370K (2016) https://doi.org/10.1117/12.2213172
Event: SPIE LASE, 2016, San Francisco, California, United States

Abstract

We report a direct method of fabricating high density nanodots on the GaAs(001) surfaces using laser irradiations on the surface. Surface images indicate that the large clumps are not accompanied with the formation of nanodots even though its density is higher than the critical density above which detrimental large clumps begin to show up in the conventional Stranski-Krastanov growth technique. Atomic force microscopy is used to image the GaAs(001) surfaces that are irradiated by high power laser pulses interferentially. The analysis suggests that high density quantum dots be fabricated directly on semiconductor surfaces.

Citation Download Citation

Anahita Haghizadeh and Haeyeon Yang "High density semiconductor nanodots by direct laser fabrication", Proc. SPIE 9737, Synthesis and Photonics of Nanoscale Materials XIII, 97370K (9 March 2016); https://doi.org/10.1117/12.2213172

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