High-temperature continuous wave operation (up to 100C) of InAs/InGaAs quantum dot electrically injected microdisk lasers

N. V. Kryzhanovskaya; E. I. Moiseev; Yu. V. Kudashova; F. I. Zubov; M. M. Kulagina; S. I. Troshkov; Yu. M. Zadiranov; D. A. Livshits; M. V. Maximov; A. E. Zhukov; Andrey Lipovskii

doi:10.1117/12.2208322

7 March 2016 High-temperature continuous wave operation (up to 100°C) of InAs/InGaAs quantum dot electrically injected microdisk lasers

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, A. E. Zhukov, Andrey Lipovskii

Author Affiliations +

Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 97670J (2016) https://doi.org/10.1117/12.2208322
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

In this work, electrically-injected microdisk lasers with diameter varied from 15 to 31μm based on an InAs/InGaAs QD active region have been fabricated and tested in continuous wave regime. At room temperature, lasing is achieved at wavelength around 1.26…1.27 μm with threshold current density about 900 A/cm². Specific series resistance is estimated to be about 10^-4 Ohm•cm². The lasers were tested at elevated temperatures. Lasing is achieved up to 100°C with threshold current of 13.8mA and lasing wavelength of 1304nm in device with 31μm diameter. To the best of our knowledge, this is the highest CW lasing temperature and the longest lasing wavelength ever reported for injection QD microdisk/microring lasers on GaAs substrates. Emission spectrum demonstrates single-mode lasing with side mode suppression ration of 24dB and dominant mode linewidth of 35pm. The far field radiation pattern demonstrates two narrow maxima off the disk plane. A combination of device characteristics achieved (low threshold, long wavelength, operation at elevated temperatures) makes them suitable for application in future optoelectronic circuits for optical interconnect systems.

Citation Download Citation

N. V. Kryzhanovskaya, E. I. Moiseev, Yu. V. Kudashova, F. I. Zubov, M. M. Kulagina, S. I. Troshkov, Yu. M. Zadiranov, D. A. Livshits, M. V. Maximov, A. E. Zhukov, and Andrey Lipovskii "High-temperature continuous wave operation (up to 100°C) of InAs/InGaAs quantum dot electrically injected microdisk lasers", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 97670J (7 March 2016); https://doi.org/10.1117/12.2208322

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Continuous wave operation

Gallium arsenide

Quantum dots

Resistance

Temperature metrology

Resonators

Optical interconnects

Show All Keywords

Keywords/Phrases

Search In:

Publication Years