Electron multiplying CMOS as Shack-Hartmann wavefront sensor

C. Buton; P. Fereyre; M. Fournier; F. Mayer; R. Barbier

doi:10.1117/12.2232773

27 July 2016 Electron multiplying CMOS as Shack-Hartmann wavefront sensor

C. Buton, P. Fereyre, M. Fournier, F. Mayer, R. Barbier

Proceedings Volume 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII; 99151J (2016) https://doi.org/10.1117/12.2232773
Event: SPIE Astronomical Telescopes + Instrumentation, 2016, Edinburgh, United Kingdom

Abstract

We will present in this article the latest developments on the electron multiplying CMOS (emCMOS) image sensor and its potential for adaptive optics applications. We will focus on the E2V pixel structures made in a 180 nm standard technology which have proved their ability to multiply signal significantly during integration of photo-generated carriers with an impact ionizing probability around 1%. Finally, we will discuss our study on different sources of charge carriers during the integration, multiplication and readout phases in order to understand the contribution of the electron multiplication to the output signal, the excess noise factor and the signal-to-noise ratio.

Citation Download Citation

C. Buton, P. Fereyre, M. Fournier, F. Mayer, and R. Barbier "Electron multiplying CMOS as Shack-Hartmann wavefront sensor", Proc. SPIE 9915, High Energy, Optical, and Infrared Detectors for Astronomy VII, 99151J (27 July 2016); https://doi.org/10.1117/12.2232773

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