High Speed 1.31µm InGaAsP Lasers With Semi-Insulating Current-Blocking Layers: Experiment And Modeling

S. Y. Huang; W. H. Cheng; J. Pooladdej; A. Appelbaum; D. Renner; K. L. Hess; S. W. Zehr

doi:10.1117/12.960137

17 January 1989 High Speed 1.31µm InGaAsP Lasers With Semi-Insulating Current-Blocking Layers: Experiment And Modeling

S. Y. Huang, W. H. Cheng, J. Pooladdej, A. Appelbaum, D. Renner, K. L. Hess, S. W. Zehr

Proceedings Volume 0995, High Frequency Analog Communications; (1989) https://doi.org/10.1117/12.960137
Event: O-E/Fiber LASE '88, 1988, Boston, MA, United States

Abstract

A high-speed and high-power InGaAsP semi-insulating buried crescent (SIBC) laser operating at 1.3-μm wavelength is described. The laser is fabricated with two epitaxial growth steps. A 3-dB direct modulation bandwidth of 11 GHz and a maximum cw output power of 42 mW have been achieved. A model based on rate equations is used to analyze these laser diodes. The effects of packaging and device parasitics on high-speed modulation are incorporated through a simple circuit configuration. The calculated frequency response is in good agreement with the measured response. The model is then used to predict the maximum obtainable modulation bandwidth. Finally, the measured relative intensity noise performance of the SIBC laser is presented.

Citation Download Citation

S. Y. Huang, W. H. Cheng, J. Pooladdej, A. Appelbaum, D. Renner, K. L. Hess, and S. W. Zehr "High Speed 1.31µm InGaAsP Lasers With Semi-Insulating Current-Blocking Layers: Experiment And Modeling", Proc. SPIE 0995, High Frequency Analog Communications, (17 January 1989); https://doi.org/10.1117/12.960137

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