High Al mole fraction crack-free AlGaN on GaN for UV laser diodes by a non-planar growth approach

Russell D. Dupuis; Frank Mehnke; Alec M. Fischer; Zhiyu Xu; Henri K. Bouchard; Theeradetch Detchprohm; Shyh-Chiang Shen; Fernando A. Ponce

doi:10.1117/12.2607411

5 March 2022 High Al mole fraction crack-free AlGaN on GaN for UV laser diodes by a non-planar growth approach

Russell D. Dupuis, Frank Mehnke, Alec M. Fischer, Zhiyu Xu, Henri K. Bouchard, Theeradetch Detchprohm, Shyh-Chiang Shen, Fernando A. Ponce

Author Affiliations +

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC1200103 (2022) https://doi.org/10.1117/12.2607411
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

III-Nitride laser diodes (LDs) emitting in the near ultraviolet spectral region can enable various important applications such as high-precision chip-scale atomic clocks. However, III-N LDs emitting near 369nm suffer from material and heterostructure design challenges including stress-induced layer cracking and p-type doping limitations. We will present a detailed study on the influence of the Al mole fraction and thickness on the occurrence of surface cracks of heterostructures using nonplanar growth by metalorganic chemical vapor deposition on macro-patterned GaN/sapphire templates and bulk GaN substrates. Data on the nonplanar growth of full III-N UV LD structures will be presented.

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Russell D. Dupuis, Frank Mehnke, Alec M. Fischer, Zhiyu Xu, Henri K. Bouchard, Theeradetch Detchprohm, Shyh-Chiang Shen, and Fernando A. Ponce "High Al mole fraction crack-free AlGaN on GaN for UV laser diodes by a non-planar growth approach", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200103 (5 March 2022); https://doi.org/10.1117/12.2607411

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