Al0.6Ga0.4N p-i-n deep-ultraviolet avalanche photodiodes

Russell D. Dupuis; Hoon Jeong; Minkyu Cho; Zhiyu Xu; Shyh-Chiang Shen; Theeradetch Detchprohm; A. Nepomuk Otte

doi:10.1117/12.2608330

5 March 2022 Al_0.6Ga_0.4N p-i-n deep-ultraviolet avalanche photodiodes

Russell D. Dupuis, Hoon Jeong, Minkyu Cho, Zhiyu Xu, Shyh-Chiang Shen, Theeradetch Detchprohm, A. Nepomuk Otte

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010P (2022) https://doi.org/10.1117/12.2608330
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Solar-blind (<280nm) deep-ultraviolet (DUV) avalanche photodetectors (APDs) are of importance in various applications such as quantum communication, biomedical, defense, and non-line-of-sight (NLOS) communication. This makes the detectors from AlxGa1-xN materials attractive for such applications owing to their wide direct-bandgap characteristics. In this work, top-illuminated DUV Al0.6Ga0.4N p-i-n APD structures were designed, grown by metalorganic chemical vapor deposition on bulk AlN substrates, and fabricated. The devices showed distinctive avalanche breakdown behavior, with breakdown voltages of -150V, and low-leakage current density of <10-8A/cm2. The peak spectral response is 141mA/W at the wavelength of 245nm under 0V.

Conference Presentation

Citation Download Citation

Russell D. Dupuis, Hoon Jeong, Minkyu Cho, Zhiyu Xu, Shyh-Chiang Shen, Theeradetch Detchprohm, and A. Nepomuk Otte "Al_0.6Ga_0.4N p-i-n deep-ultraviolet avalanche photodiodes", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010P (5 March 2022); https://doi.org/10.1117/12.2608330

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