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In this study, rA is investigated by different growth temperature between from 1200℃ to 1650℃ during AlN growth by high temperature metalorganic vapor phase epitaxy (MOVPE). The value of dislocation density calculated by X-ray rocking curve (XRC) fullwidth at half-maximum (FWHM) is decreasing with increasing AlN layer thickness. Moreover, it is found that there is threshold value in rA at the temperature of 1400℃. As a result, rA value is observed 20.2 nm in AlN with growth temperature of 1650℃, this represents close to rA value (27.5 nm) in GaN.
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