Poster
5 March 2022 Threshold temperature in annihilation radius of dislocation for AlN
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Conference Poster
Abstract
In this study, rA is investigated by different growth temperature between from 1200℃ to 1650℃ during AlN growth by high temperature metalorganic vapor phase epitaxy (MOVPE). The value of dislocation density calculated by X-ray rocking curve (XRC) fullwidth at half-maximum (FWHM) is decreasing with increasing AlN layer thickness. Moreover, it is found that there is threshold value in rA at the temperature of 1400℃. As a result, rA value is observed 20.2 nm in AlN with growth temperature of 1650℃, this represents close to rA value (27.5 nm) in GaN.
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Shota Tsuda, Takumi Miyagawa, Reiya Aono, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, and Kentaro Nagamatsu "Threshold temperature in annihilation radius of dislocation for AlN", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120011B (5 March 2022); https://doi.org/10.1117/12.2607569
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KEYWORDS
Aluminum nitride

Aluminum

Gallium nitride

Interfaces

Light emitting diodes

Luminous efficiency

Sapphire

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