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5 March 2022 Transport properties of minority carriers in mid-wavelength InAs/InAsSb superlattice infrared detectors
Alexander Soibel, D. Z-Y. Ting, Anita Fisher, Arezou Khoshakhlagh, Brian Pepper, Sarath Gunapala
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Proceedings Volume PC12009, Quantum Sensing and Nano Electronics and Photonics XVIII; PC1200907 (2022) https://doi.org/10.1117/12.2609101
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
A variety of mid-, long - and very long– wavelength infrared (MWIR, LWIR and VLWIR) detectors and focal plane arrays utilizing InAs/InAsSb superlattices have been demonstrated in the last decade. At the same time, the transport properties of minority carriers in these structures became an area of active investigation after initial observations of hole localization at low temperatures attributed to the nonuniformity of superlattice layers thickness. In this work we study the dependence of minority carrier (hole) transport, absorption coefficient and quantum efficiency (QE) of a 5.6 µm cut-off wavelength MWIR InAs/InAsSb detector on temperatures and applied bias
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Alexander Soibel, D. Z-Y. Ting, Anita Fisher, Arezou Khoshakhlagh, Brian Pepper, and Sarath Gunapala "Transport properties of minority carriers in mid-wavelength InAs/InAsSb superlattice infrared detectors", Proc. SPIE PC12009, Quantum Sensing and Nano Electronics and Photonics XVIII, PC1200907 (5 March 2022); https://doi.org/10.1117/12.2609101
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KEYWORDS
Superlattices
Infrared detectors
Diffusion
Quantum efficiency
Absorption
Long wavelength infrared
Mid-IR
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