EUV mask absorber induced best focus shifts

Hazem Mesilhy; Peter Evanschitzky; Gerardo Bottiglieri; Eelco van Setten; Claire van Lare; Tim Brunner; Mark van de Kerkhof; Andreas Erdmann

doi:10.1117/12.2614174

13 June 2022 EUV mask absorber induced best focus shifts

Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann

Author Affiliations +

Proceedings Volume PC12051, Optical and EUV Nanolithography XXXV; PC1205108 (2022) https://doi.org/10.1117/12.2614174
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

We investigate the induced best focus shifts by the mask absorber. The effect of n, k, bias and target size on BF shifts is studied. We consider lines and spaces with pitch = 5× target size. We present a correlation between the BF shifts and Zernike phase offset and the fourth-order Zernike coefficient that represents defocus. When no mitigation strategies are applied, low n absorber materials can show stronger BF shifts and stronger phase variation versus target size. The knowledge gained from this study will help to identify combinations of absorber properties (n, k, thickness) and biasing strategies, which provide high NILS, and threshold to size and enable proper focus control.

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Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, and Andreas Erdmann "EUV mask absorber induced best focus shifts", Proc. SPIE PC12051, Optical and EUV Nanolithography XXXV, PC1205108 (13 June 2022); https://doi.org/10.1117/12.2614174

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KEYWORDS

Extreme ultraviolet

Refractive index

Nanoimprint lithography

3D image processing

3D printing

Diffraction

Extreme ultraviolet lithography

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