Intrinsically photo-stable organic bulk heterojunctions (BHJs) are crucial for achieving long lifetimes of organic photovoltaics.1 However, the intrinsic photodegradation of BHJs is often coupled with various externally induced degradation mechanisms, bringing challenges to optimizing their long term operational reliability. Here, experimental tools including grazing-incidence wide-angle X-ray and resonant soft X-ray scattering are combined with bulk quantum efficiency analysis to quantitatively identify the sources that limit the intrinsic lifetime of non-fullerene acceptor based BHJs under illumination.2 The methodology presented can effectively separate intrinsic degradation from externally induced causes, and thus can be used as a tool for guiding molecular and morphological design of long-lifetime organic BHJs. Furthermore, a model is proposed to attribute the physical origins of photodegradation of organic BHJs to second-order events such as exciton-exciton annihilation.2-3 The model is supported by the observed square law dependence of the degradation rate with light intensity.
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