Study of ultra high pressure annealing of Si-implanted GaN epilayers with different ion fluences

Andrzej Taube; Oskar Sadowski; Iwona Sankowska; Karolina Pągowska; Marek Ekielski; Paweł Michałowski; Joanna Jankowska-Śliwińska; Jarosław Tarenko; Anna Szerling; Paweł Prystawko; Kacper Sierakowski; Piotr Jaroszyński; Michał Boćkowski; Izabella Grzegory

doi:10.1117/12.2648902

21 March 2023 Study of ultra high pressure annealing of Si-implanted GaN epilayers with different ion fluences

Andrzej Taube, Oskar Sadowski, Iwona Sankowska, Karolina Pągowska, Marek Ekielski, Paweł Michałowski, Joanna Jankowska-Śliwińska, Jarosław Tarenko, Anna Szerling, Paweł Prystawko, Kacper Sierakowski, Piotr Jaroszyński, Michał Boćkowski, Izabella Grzegory

Author Affiliations +

Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2648902
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

In this work we presents effect of ultra high pressure annealing on Si-implanted GaN n-type and p-type epilayers on ammonothermally grown bulk GaN substrates. Samples were blanked implanted with different Si ion fluences from 3x1014 cm^-2 to 3x1015 cm^-2 and then annealed using UHPA at temperature of 1200, 1300 and 1400°C for 5 minutes at 1 GPa. Ion distribution before and after annealing where investigated using SIMS method showing no Si diffusion in p-type GaN along with Mg diffusion from epilayer and very low Si diffusion in n-type GaN epilayers. X-ray diffraction studies shows that not all defects were recovered after annealing, especially for high ion fluences. Annealing at 1400°C causes changes in implanted GaN morphology. The surface roughness where increased after annealing especially for samples implanted with 3x1015 cm^-2Si dose. Our results shows that more work is needed to optimize UHPA parameters for defect recovery in Si-implanted GaN especially for high ion fluences.

Conference Presentation

Citation Download Citation

Andrzej Taube, Oskar Sadowski, Iwona Sankowska, Karolina Pągowska, Marek Ekielski, Paweł Michałowski, Joanna Jankowska-Śliwińska, Jarosław Tarenko, Anna Szerling, Paweł Prystawko, Kacper Sierakowski, Piotr Jaroszyński, Michał Boćkowski, and Izabella Grzegory "Study of ultra high pressure annealing of Si-implanted GaN epilayers with different ion fluences", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648902

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
PRESENTATION

WATCH
PRESENTATION SAVE TO MY LIBRARY

GET CITATION

KEYWORDS

Gallium nitride

Annealing

Ions

Silicon

Diffusion

Chemical species

Ion implantation

Show All Keywords

Keywords/Phrases

Search In:

Publication Years