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14 March 2023 Electrically driven deep ultraviolet light emission from hexagonal boron nitride van der Waals heterostructures (Conference Presentation)
Young Duck Kim
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Proceedings Volume PC12441, Light-Emitting Devices, Materials, and Applications XXVII; PC124410M (2023) https://doi.org/10.1117/12.2648042
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Hexagonal boron nitride (hBN) is a two-dimensional van der Waals material and is composed of boron and nitrogen atoms in a hexagonal lattice. hBN is the wide-bandgap semiconductor with a band of 6.4 eV and shows the efficient band edge cathodoluminescence at 215 nm as well as lasing behavior. Here I will present the efficient DUV electroluminescence (EL) in band edge emission at 215 nm as well as broad 303-333 nm emission peaks from hBN van der Waals heterostructure. We observed that 303-333 nm broad emissions with phonon replica of optical phonon energy of hBN based on the Franck-Condon principle, which are attributed to the electric field induced color centers and its highly localized excitons features. I will also present the tunable DUV light emission around band edge emission of 215 nm as a function of electric field direction and discuss the possible origin of DUV EL from hBN van der Waals heterostructures.
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Young Duck Kim "Electrically driven deep ultraviolet light emission from hexagonal boron nitride van der Waals heterostructures (Conference Presentation)", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC124410M (14 March 2023); https://doi.org/10.1117/12.2648042
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KEYWORDS
Deep ultraviolet
Boron
Heterojunctions
Light sources
Solid state electronics
Electroluminescence
Semiconductors
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