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We show a new approach for achieving precise control over the internal structure of phase-change materials (PCMs) using the glancing angle deposition (GLAD) technique, which offers a foundry-friendly bottom-up growth alternative to commonly used lithography or chemical modification methods that introduce unwanted defects and impurities. We show that by adjusting deposition angle and rotation speed during growth, GLAD can enable a precise and unprecedented engineering of refractive index and extinction coefficient, in both amorphous and crystalline phases of commonly used GeTe and GST PCM films, without the need to alter their chemical composition.
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