Kaustuve Bhattacharyya,1 Diederik de Bruin,1 Rudy Peeters,1 Jara G. Santaclara,1 Herman Heijmerikx,1 Rob van ballegoij,1 Eelco van Setten,1 Jan van Schoothttps://orcid.org/0000-0001-6643-7254,1 Sjoerd Lok,1 Greet Storms1
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Cost-effective scaling of semiconductor devices is enabled by High NA EUV technology, securing a solution for several upcoming technology nodes. This new technology offers improvements in resolution and overlay capabilities, while we need to take the impact of the half-field exposure (inherent to anamorphic nature of High NA optics) into account. This is all done while meeting the tighter on-product performance requirements in future nodes.
This paper will describe the on-product performance requirements and corresponding capabilities of the High NA EUV system at the advanced nodes; especially from overlay, imaging and focus point-of-view. This will include half-field exposure use-cases that provide increased flexibility in overlay control while optimizing the field-layout to maximize productivity. Stitching of two half-fields will also be discussed from both overlay and imaging perspective.
Finally, we will review the requirements of the industry eco-system.
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Kaustuve Bhattacharyya, Diederik de Bruin, Rudy Peeters, Jara G. Santaclara, Herman Heijmerikx, Rob van ballegoij, Eelco van Setten, Jan van Schoot, Sjoerd Lok, Greet Storms, "Enabling the next step for on-product performance with high-NA EUV system," Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC1275003 (22 November 2023); https://doi.org/10.1117/12.2687701