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22 November 2023 Resolution and patterning performance quantification using efficient e-beam metrology
Cyrus E. Tabery, Miao Wang, Victor Blanco Carballo, Eren Canga, Aiqin Jiang, Chris Spence, Tom Wallow
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Proceedings Volume PC12750, International Conference on Extreme Ultraviolet Lithography 2023; PC127500B (2023) https://doi.org/10.1117/12.2688141
Event: SPIE Photomask Technology + EUV Lithography, 2023, Monterey, California, United States
Abstract
The Mini-Proximity mark is designed to efficiently characterize Lithography resolution and patterning capability. It utilizes ASML HMI e-beam eP5 tool LFoV to measure entire mark within one SEM FoV which covers large pitch and CD range locally. The design considers sufficient DUT area to have correct LER, LWR and stochastic defect. The design based metrology analysis flow analyzes defect free, defective, unsolved patterning and reticle defect regions vs measured/ simulated imaging KPIs. FEM wafer studies does and focus patterning limitations. This mark design is expected to be used for imaging qualification.
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Cyrus E. Tabery, Miao Wang, Victor Blanco Carballo, Eren Canga, Aiqin Jiang, Chris Spence, and Tom Wallow "Resolution and patterning performance quantification using efficient e-beam metrology", Proc. SPIE PC12750, International Conference on Extreme Ultraviolet Lithography 2023, PC127500B (22 November 2023); https://doi.org/10.1117/12.2688141
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KEYWORDS
Electron beam lithography
Metrology
Design and modelling
Scanning laser ophthalmoscopy
Etching
Extreme ultraviolet
Failure analysis
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