CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12953 > Article
Presentation
10 April 2024 Vertically tailored hybrid multilayer EUV photoresist with vertical molecular wire structure
Myung Mo Sung, Hyeonseok Ji, Jaehyuk Lee, Jinho Ahn, Chang Gyoun Kim, Sangsul Lee, Yasin Ekinci, Prajith Karadan, Dimitrios Kazazis
Author Affiliations +
Proceedings Volume PC12953, Optical and EUV Nanolithography XXXVII; PC129530K (2024) https://doi.org/10.1117/12.3009753
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States
Abstract
Basic requirements for good patterns using extreme ultraviolet lithography (EUVL) are sensitivity, resolution, line edge roughness (LER), outgassing, etch resistance, defect density, and reproducibility. Among them, it has been proved that resolution, LER, and sensitivity (RLS) are interdependent with each other. The trade-off between RLS pose a critical challenge in the race towards device downscaling to 1 nm node. LER is the most important consideration to determine the manner in which EUVL will be employed. Recently, we develop a new EUV dry resist with organic-inorganic hybrid multilayer structures vertically tailored with several functional layers by using molecular layer deposition. Additionally, each layer includes a self-assembled organic monolayer to generate a vertical molecular wire structure. The hybrid multilayer resist shows high EUV sensitivity from the high EUV absorbing and reactive layers there. Furthermore, the vertical molecular wire structure of the hybrid resist generates exceptionally low LER.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Myung Mo Sung, Hyeonseok Ji, Jaehyuk Lee, Jinho Ahn, Chang Gyoun Kim, Sangsul Lee, Yasin Ekinci, Prajith Karadan, and Dimitrios Kazazis "Vertically tailored hybrid multilayer EUV photoresist with vertical molecular wire structure", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530K (10 April 2024); https://doi.org/10.1117/12.3009753
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Extreme ultraviolet lithography
Extreme ultraviolet
Line width roughness
Photoresist materials
Monolayers
Synchrotron radiation
Outgassing
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top