Presentation
2 August 2024 Color centers in silicon: generation and control of properties
Author Affiliations +
Abstract
Recently, fluorescent point defects in silicon have been explored as promising candidates for single photon sources, which may pave the way towards the integration of quantum photonic devices with existing silicon-based electronic platforms. However, the current processes for creating such defects are complex, and commonly require one or two implantation steps. In this work, we have demonstrated implantation-free methods for obtaining G and W-centers in commercial silicon-on-insulator substrates using femtosecond laser annealing. We also demonstrate an enhancement of the color centers’ optical properties by coupling them with photonic structures. For example, we have shown an improvement in emission directivity for G centers by embedding them into silicon Mie resonators fabricated by dewetting, achieving an extraction efficiency exceeding 60% with standard numerical apertures. We will also address the control of emission polarization by embedding color centers in photonic crystals.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hugo Quard, Mario Khoury, Adong Wang, Tobias Herzig, Jan Meijer, Sébastien Pezzagna, Sébastien Cueff, David Grojo, Marco Abbarchi, Hai Son Nguyen, Nicolas Chauvin, and Thomas Wood "Color centers in silicon: generation and control of properties", Proc. SPIE PC13106, Photonics for Quantum 2024, PC131060Z (2 August 2024); https://doi.org/10.1117/12.3027124
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KEYWORDS
Silicon

Color centers

Optical properties

Annealing

Femtosecond phenomena

Finite-difference time-domain method

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