Xin Yi,1 Lisa Saalbach,1 Fiona Fleming,1 Mrudul Modak,1 Dave Muir,1 Gerald S. Buller,1 Muhammad Mirza,2 Jaroslaw Kirdoda,2 Derek Dumas,2 Charlie Smithhttps://orcid.org/0009-0000-0082-0840,2 Conor Coughlan,2 Ross Millar,2 Douglas Paul,2 Xiao Jin,3 Qingyu Tian,3 John David3
1Heriot-Watt Univ. (United Kingdom) 2Univ. of Glasgow (United Kingdom) 3The Univ. of Sheffield (United Kingdom)
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This talk shows the recent development of linear and Geiger-mode pseudo-planar Ge-on-Si avalanche photodiodes (APDs) in the short-wave infrared region. We demonstrate a 26 µm-diameter Ge-on-Si Geiger-mode APD with an extremely low noise-equivalent-power of 7.7 × 10−17 WHz−½ and a jitter value of 134 ± 10 ps at 1310 nm wavelength and at 100 K operating temperature. We demonstrate that a linear array of Ge-on-Si linear mode APDs comprising of 10 pixels shows high responsivity, highly uniform avalanche breakdown voltage and avalanche gain at 1550 nm wavelength and at room temperature.
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Xin Yi, Lisa Saalbach, Fiona Fleming, Mrudul Modak, Dave Muir, Gerald S. Buller, Muhammad Mirza, Jaroslaw Kirdoda, Derek Dumas, Charlie Smith, Conor Coughlan, Ross Millar, Douglas Paul, Xiao Jin, Qingyu Tian, John David, "Linear and Geiger-mode pseudo-planar Ge-on-Si avalanche photodiodes in the SWIR (Conference Presentation)," Proc. SPIE PC13145, Infrared Sensors, Devices, and Applications XIV, PC1314507 (3 October 2024); https://doi.org/10.1117/12.3027259