Presentation
3 October 2024 Linear and Geiger-mode pseudo-planar Ge-on-Si avalanche photodiodes in the SWIR (Conference Presentation)
Author Affiliations +
Abstract
This talk shows the recent development of linear and Geiger-mode pseudo-planar Ge-on-Si avalanche photodiodes (APDs) in the short-wave infrared region. We demonstrate a 26 µm-diameter Ge-on-Si Geiger-mode APD with an extremely low noise-equivalent-power of 7.7 × 10−17 WHz−½ and a jitter value of 134 ± 10 ps at 1310 nm wavelength and at 100 K operating temperature. We demonstrate that a linear array of Ge-on-Si linear mode APDs comprising of 10 pixels shows high responsivity, highly uniform avalanche breakdown voltage and avalanche gain at 1550 nm wavelength and at room temperature.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin Yi, Lisa Saalbach, Fiona Fleming, Mrudul Modak, Dave Muir, Gerald S. Buller, Muhammad Mirza, Jaroslaw Kirdoda, Derek Dumas, Charlie Smith, Conor Coughlan, Ross Millar, Douglas Paul, Xiao Jin, Qingyu Tian, and John David "Linear and Geiger-mode pseudo-planar Ge-on-Si avalanche photodiodes in the SWIR (Conference Presentation)", Proc. SPIE PC13145, Infrared Sensors, Devices, and Applications XIV, PC1314507 (3 October 2024); https://doi.org/10.1117/12.3027259
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KEYWORDS
Short wave infrared radiation

Avalanche photodetectors

Avalanche photodiodes

Infrared radiation

Silicon

Germanium

Infrared imaging

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