Chemical reactions leading to latent image formation in Chemically Amplified Resists (CARs) upon EUV exposure remain poorly understood. One barrier to understanding exposure chemistry lies in the sheer number of possible, competing reactions that occur upon exposure. Thus, we have combined high-throughput density functional theory and a chemical reaction network to perform kinetic Monte Carlo modelling to predict reactions occurring in an ESCAP photoresist upon blanket EUV exposure. Our model predicts the formation of several products, some of which have been previously experimentally observed outgassing from ESCAP photoresists, as well as new products formed within the polymer matrix. Additionally, we have performed analysis of our simulations to better understand pathways by which these products form. Here, we describe the refinement of our model, relevant, qualitative results, and compare the output of our model to experiments.
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