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13 November 2024 Non-PFAS biomass EUV resist for High-NA EUV lithography
Kazuyo Morita
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Proceedings Volume PC13215, International Conference on Extreme Ultraviolet Lithography 2024; PC132150N (2024) https://doi.org/10.1117/12.3034561
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States
Abstract
In semiconductor industry, higher chip performance is required by the market. High-NA EUV lithography will be employed in high volume manufacturing within few years due to achieve the requirement. Another requirement from the market is a reduction of PFAS in the manufacturing process because there are of concern due to their persistence in the environment and potential adverse health effects. However, conventional EUV resist use PFAS to improve their lithography performance. Considering this situation, non-PFAS biomass EUV resist has been proposed. It was confirmed HP 10 nm L/S pattern by 0.50 NA EUV lithography using MET5 tool by Lawrence Berkeley national laboratory with non-PFAS biomass EUV resist was obtained. In this paper, we will report our updated result by lithography process optimization.
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Kazuyo Morita "Non-PFAS biomass EUV resist for High-NA EUV lithography", Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150N (13 November 2024); https://doi.org/10.1117/12.3034561
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KEYWORDS
Biomass
Extreme ultraviolet
Extreme ultraviolet lithography
Lithography
Industry
Manufacturing
Photoresist processing
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