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13 November 2024 Novel lithography process for enhanced high numerical aperture EUV patterning performance
Yuhei Kuwahara, Soichiro Okada, Satoru Shimura, Kathleen Nafus, Philippe Foubert
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Proceedings Volume PC13215, International Conference on Extreme Ultraviolet Lithography 2024; PC132150P (2024) https://doi.org/10.1117/12.3034811
Event: SPIE Photomask Technology + EUV Lithography, 2024, Monterey, California, United States
Abstract
As semiconductor technology continues to evolve, the demand for advanced lithography techniques to meet the industry's requirements becomes crucial. High Numerical Aperture (NA) EUV lithography has emerged as a promising solution for realizing sub-10 nm node designs. However, realizing the full potential of high NA EUV lithography requires holistic efforts to improve the entire patterning process and deliver enhanced performance. This study shares the latest coater/developer development efforts focused on improving high NA EUV patterning performance. These advancements encompass the development of process optimizations, collectively geared towards enabling high-resolution, high-throughput, and defect-free patterning. The latest performance for both chemically amplified resists and metal oxide resists will be introduced, with a focus on defect mitigation, pattern collapse prevention and critical dimensions stability for pitch 24 nm line and space, pitch 32 nm contact hole and pillar pattern with single exposure. This result ensures the successful implementation of high NA EUV lithography for future technology nodes and beyond.
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Yuhei Kuwahara, Soichiro Okada, Satoru Shimura, Kathleen Nafus, and Philippe Foubert "Novel lithography process for enhanced high numerical aperture EUV patterning performance", Proc. SPIE PC13215, International Conference on Extreme Ultraviolet Lithography 2024, PC132150P (13 November 2024); https://doi.org/10.1117/12.3034811
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KEYWORDS
Optical lithography
Extreme ultraviolet
Lithography
Extreme ultraviolet lithography
Chemically amplified resists
Industry
Metal oxides
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