1 January 2011 Critical dimension-scanning electron microscope magnification calibration with 25-nm pitch grating reference
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Abstract
We present a novel multilayer grating pattern with a sub-50-nm pitch for critical dimension-scanning electron microscope (CD-SEM) magnification calibration as an advanced version of the conventional 100-nm pitch grating reference. A 25-nm pitch grating reference is fabricated by multilayer deposition of alternating materials and then material-selective chemical etching of the polished cross-sectional surface. A line and space pattern with 25-nm pitch is easily resolved, and a high-contrast secondary electron image of the grating pattern is obtained under 1-kV acceleration voltage using the CD-SEM. The uniformity of the 25-nm pitch of the grating is <1 nm in three standard deviations of the mean. The line-edge roughness of the grating pattern is also <0.5 nm. Such a fine and uniform grating pattern will fulfill the requirements of a magnification calibration reference for a next-generation CD-SEM.
©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)
Yoshinori Nakayama, Jiro Yamamoto, and Hiroki Kawada "Critical dimension-scanning electron microscope magnification calibration with 25-nm pitch grating reference," Journal of Micro/Nanolithography, MEMS, and MOEMS 10(1), 013021 (1 January 2011). https://doi.org/10.1117/1.3565466
Published: 1 January 2011
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CITATIONS
Cited by 9 scholarly publications.
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KEYWORDS
Calibration

Silicon

Multilayers

Scanning electron microscopy

Diffraction gratings

Electron microscopes

Wet etching

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