Device- and circuit-level variability due to random discrete dopant in resist- and spacer-defined nanoscale FinFETs

Rituraj Singh Rathore; Ashwani K. Rana

doi:10.1117/1.JMM.17.1.013507

19 March 2018 Device- and circuit-level variability due to random discrete dopant in resist- and spacer-defined nanoscale FinFETs

Rituraj Singh Rathore, Ashwani K. Rana

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 17, Issue 1, 013507 (March 2018). https://doi.org/10.1117/1.JMM.17.1.013507

Abstract

In current CMOS technology, parameter variations are playing a vital role in limiting the benefits of downscaling, especially in the nanodomain. This work presents the investigation of random dopant fluctuation (RDF) in several possible line-edge roughness (LER)-induced fin shapes of spacer- (i.e., correlated LER) and resist- (i.e., uncorrelated LER) defined patterning techniques for a 14-nm FinFET structure. The three-dimensional (3-D) technology computer-aided design simulation on a large statistical ensemble has been carried out to analyze the impact of the RDF on various device parameters such as threshold voltage, drive current, off current, and drain-induced barrier lowering. It is observed that the impact of RDF on electrical parameters mainly depends on the fin shape and is dominant in all resist-defined FinFET structures. It is also found that the impact of RDF can diminish significantly using the spacer-defined patterning technique. Further, the impact of RDF in spacer- and resist-defined FinFET structures has been investigated for noise margins of 6-T static random access memories (SRAM). It is concluded that random dopant variations in SRAM performance offer better immunity in the case of spacer-defined FinFETs compared with resist-defined FinFETs.

Citation Download Citation

Rituraj Singh Rathore and Ashwani K. Rana "Device- and circuit-level variability due to random discrete dopant in resist- and spacer-defined nanoscale FinFETs," Journal of Micro/Nanolithography, MEMS, and MOEMS 17(1), 013507 (19 March 2018). https://doi.org/10.1117/1.JMM.17.1.013507

Received: 9 May 2017; Accepted: 20 February 2018; Published: 19 March 2018

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available