Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?

Andreas Erdmann; Peter Evanschitzky; Hazem Mesilhy; Vicky Philipsen; Eric Hendrickx; Markus Bauer

doi:10.1117/1.JMM.18.1.011005

11 August 2018 Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?

Andreas Erdmann, Peter Evanschitzky, Hazem Mesilhy, Vicky Philipsen, Eric Hendrickx, Markus Bauer

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 18, Issue 1, 011005 (August 2018). https://doi.org/10.1117/1.JMM.18.1.011005

Abstract

The understanding, characterization, and mitigation of three-dimensional (3-D) mask effects including telecentricity errors, contrast fading, and best focus shifts become increasingly important for the performance optimization of future extreme ultraviolet (EUV) projection systems and mask designs. We explore the potential of attenuated phase shift mask (attPSM) to mitigate 3-D mask effects and exploit them for future EUV imaging. The scattering of light at the absorber edges results in significant phase deformations, which impact the effective phase and the lithographic performance of attPSM for EUV. Rigorous mask and imaging simulations in combination with multiobjective optimization techniques are employed to identify the most appropriate material properties, mask, and source geometries. The resulting imaging performance is compared to the achievable performance of binary EUV masks.

CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Andreas Erdmann, Peter Evanschitzky, Hazem Mesilhy, Vicky Philipsen, Eric Hendrickx, and Markus Bauer "Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?," Journal of Micro/Nanolithography, MEMS, and MOEMS 18(1), 011005 (11 August 2018). https://doi.org/10.1117/1.JMM.18.1.011005

Received: 30 May 2018; Accepted: 23 July 2018; Published: 11 August 2018

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Cited by 11 scholarly publications and 1 patent.

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KEYWORDS

Photomasks

Nanoimprint lithography

Extreme ultraviolet

Phase shifts

Refractive index

Nickel

Ruthenium

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