Fluorinated polymethacrylates as highly sensitive nonchemically amplified e-beam resists

Jeffrey R. Strahan; Jacob R. Adams; Kane Jen; Anja Vanleenhove; Colin C. Neikirk; Timothy Rochelle; Roel Gronheid; Carlton Grant Willson

doi:10.1117/1.3274005

1 October 2009 Fluorinated polymethacrylates as highly sensitive nonchemically amplified e-beam resists

Jeffrey R. Strahan, Jacob R. Adams, Kane Jen, Anja Vanleenhove, Colin C. Neikirk, Timothy Rochelle, Roel Gronheid, Carlton Grant Willson

Author Affiliations +

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 8, Issue 4, 043011 (October 2009). https://doi.org/10.1117/1.3274005

Abstract

In an effort to improve on the sensitivity of commercial nonchemically amplified e-beam resists, four polyacrylates functionalized with α-CF₃ and/or CH₂CF₃ alkoxy substituents were studied. The α-CF₃ substituent is known to increase backbone-scission efficiency while simultaneously eliminating acidic outgassing and cross-linking known to occur in α-halogen substituted polyacrylates. Contrast curves for the polymeric α-CF₃ acrylates, generated through e-beam exposure, showed that the resists required an order of magnitude less dose than the current industry standards, poly(methyl methacrylate) (PMMA) and ZEP. The fundamental sensitivity of these materials to backbone scissioning was determined via ⁶⁰Co γ-ray irradiation. The chain scissioning, G(s), and cross-linking, G(x), values calculated from the resulting change in molecular weight demonstrated that all fluorinated resists possess higher G(s) values than either PMMA or ZEP and have no detectable G(x) values. Utilizing e-beam and EUV interference lithographies, the photospeed of poly(methyl α-trifluoromethacrylate) (PMTFMA) was found to be 2.8× and 4.0× faster, respectively, than PMMA.

©(2009) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Jeffrey R. Strahan, Jacob R. Adams, Kane Jen, Anja Vanleenhove, Colin C. Neikirk, Timothy Rochelle, Roel Gronheid, and Carlton Grant Willson "Fluorinated polymethacrylates as highly sensitive nonchemically amplified e-beam resists," Journal of Micro/Nanolithography, MEMS, and MOEMS 8(4), 043011 (1 October 2009). https://doi.org/10.1117/1.3274005

Published: 1 October 2009

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