13 December 2022 Unavoidable renaissance of electron metrology in the age of high numerical aperture extreme ultraviolet lithography
Author Affiliations +
Abstract

Things are drastically changing in the field of metrology. The main reason for that is related to the daunting specification requirements for metrology imposed by high numerical aperture extreme ultraviolet lithography (high NA EUVL). We observe a variety of generation e-beam tools proliferating in imec unique ecosystem, from in-line transmission electron microscope (TEM) to voltage contrast (VC) overlay tools, from die to database (D2DB) large area scanning electron microscope (SEM) to high-voltage SEM, from artificial intelligence (AI)-based inspection tools to massive data acquisition e-beam system. We are facing a renaissance of e-beam metrology. We are going to describe the challenges as well as the latest evolutionary developments of e-beam metrology in the semiconductor industry.

© 2022 Society of Photo-Optical Instrumentation Engineers (SPIE)
Gian Francesco Lorusso "Unavoidable renaissance of electron metrology in the age of high numerical aperture extreme ultraviolet lithography," Journal of Micro/Nanopatterning, Materials, and Metrology 22(2), 021005 (13 December 2022). https://doi.org/10.1117/1.JMM.22.2.021005
Received: 11 August 2022; Accepted: 26 October 2022; Published: 13 December 2022
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Metrology

Scanning electron microscopy

Inspection

Transmission electron microscopy

Extreme ultraviolet lithography

Semiconducting wafers

Optical proximity correction

Back to Top