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7 July 2014 High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate
Chen-Yu Shieh, Ming-Ta Tsai, Zhen-Yu Li, Hao-Chung Kuo, Jenq-Yang Chang, Gou-Chung Chi, Wei-I Lee
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Journal of Nanophotonics, Vol. 8, Issue 1, 083081 (July 2014). https://doi.org/10.1117/1.JNP.8.083081
Abstract
We investigated the influence of free-standing GaN (FS-GaN) substrates on the performance of ultraviolet light-emitting-diodes (UV-LEDs) grown on top by atmospheric pressure metal-organic chemical vapor deposition. High-resolution double-crystal x-ray diffraction (HRDCXD) analysis demonstrated high-order satellite peaks and clear fringes between them for UV-LEDs grown on the FS-GaN substrate, from which the interface roughness was estimated. In addition, the full width at half maximum of the HRDCXD rocking curve in the (0002) and the (101¯2) reflections were reduced to below 90 arc sec. The Raman results indicated that the GaN-based epilayer of strain free was grown. Additionally, the effect of the FS-GaN substrate on the crystal quality of the UV-LEDs was examined in detail by transmission electron microscopy (TEM). The TEM characterizations revealed no defects and V-pits were found in the scanned area. Based on the results mentioned above, the light output power of UV-LEDs on the FS-GaN substrate can be enhanced drastically by 80% and 90% at 20 and 100 mA, respectively. Furthermore, an ultralow efficiency degradation of about 3% can be obtained for the UV-LEDs on the FS-GaN substrate at a high injection current. The use of an FS-GaN substrate is suggested to be effective for improving the emission efficiency and droop of UV-LEDs grown thereon.
CC BY: © The Authors. Published by SPIE under a Creative Commons Attribution 4.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.
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Chen-Yu Shieh, Ming-Ta Tsai, Zhen-Yu Li, Hao-Chung Kuo, Jenq-Yang Chang, Gou-Chung Chi, and Wei-I Lee "High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate," Journal of Nanophotonics 8(1), 083081 (7 July 2014). https://doi.org/10.1117/1.JNP.8.083081
Published: 7 July 2014
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KEYWORDS
Sapphire
Gallium nitride
Transmission electron microscopy
Ultraviolet radiation
Raman spectroscopy
Crystals
Satellites
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