Resist Possibilities In Ion Beam Lithography

A. Macrander; D. Barr; A. Wagner

doi:10.1117/12.7973085

1 April 1983 Resist Possibilities In Ion Beam Lithography

A. Macrander, D. Barr, A. Wagner

Author Affiliations +

Optical Engineering, Vol. 22, Issue 2, 222215 (April 1983). https://doi.org/10.1117/12.7973085

Abstract

A broad range of materials and processing techniques amenable to producing resist systems for ion beam lithography are discussed. The effect of random fluctuations in exposure dose on feature size for a Gaussian beam of constant shape is calculated. The results of Monte Carlo simulations of exposures of PMMA on silicon by 50 keV H+,100 keV H2+, and 150 keV Li+ ions are presented, and it is shown that feature resolution is fundamentally limited by the physical processes through which energy is deposited.

Citation Download Citation

A. Macrander, D. Barr, and A. Wagner "Resist Possibilities In Ion Beam Lithography," Optical Engineering 22(2), 222215 (1 April 1983). https://doi.org/10.1117/12.7973085

Published: 1 April 1983

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available