1 September 1987 Ultraviolet And Extreme Ultraviolet Response Of Charge-Coupled-Device Detectors
R. A. Stern, R. C. Catura, R. Kimble, A. F. Davidsen, M. Winzenread, M. M. Blouke, R. Hayes, D. M. Walton, J. L. Culhane
Author Affiliations +
Abstract
We present results of a program to enhance the ultraviolet and extreme ultraviolet response of charge-coupled devices. The ultimate goal of our program is to develop a large format device with both high and stable quantum efficiency from 100 to 3000 A that can be used as a windowless imaging detector in a space environment. Ultraviolet quantum efficiency measurements have been made for several ion-implanted and laser-annealed test CCDs specially fabricated by Tektronix for this program. Quantum efficiencies as high as 22% at 2500 A , where the absorption depth in silicon is -55 A, have been observed in one such test CCD. Quantum efficiency measurements of standard back-illuminated RCA and Tektronix CCDs are also presented.
R. A. Stern, R. C. Catura, R. Kimble, A. F. Davidsen, M. Winzenread, M. M. Blouke, R. Hayes, D. M. Walton, and J. L. Culhane "Ultraviolet And Extreme Ultraviolet Response Of Charge-Coupled-Device Detectors," Optical Engineering 26(9), 269875 (1 September 1987). https://doi.org/10.1117/12.7974165
Published: 1 September 1987
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Cited by 34 scholarly publications.
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KEYWORDS
Charge-coupled devices

Ultraviolet radiation

Extreme ultraviolet

Quantum efficiency

Sensors

Absorption

Detector development

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