1 April 1992 Optical sensors
Vladimir T. Khryapov, Vladimir P. Ponomarenko, V. G. Butkevitch, Igor I. Taubkin, Vitaly I. Stafeev, Sergey A. Popov, Vladimir V. Osipov
Author Affiliations +
Abstract
Experimental and theoretical results are presented of photosensitive semiconductor structures as well as the main developments of modern semiconductor photoresistors, photodiodes, including injection ones, based on polycrystalline and monocrystalline materials, multilayer structures and superlattices for the visual-far infrared spectral range. Performance of multielement photodetectors based on lead chalcogenides, germanium and silicon, AIIIBV compounds, and CMT structures is described.
Vladimir T. Khryapov, Vladimir P. Ponomarenko, V. G. Butkevitch, Igor I. Taubkin, Vitaly I. Stafeev, Sergey A. Popov, and Vladimir V. Osipov "Optical sensors," Optical Engineering 31(4), (1 April 1992). https://doi.org/10.1117/12.56113
Published: 1 April 1992
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CITATIONS
Cited by 5 scholarly publications.
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KEYWORDS
Photodetectors

Photodiodes

Lead

Photoresistors

Silicon

Chemical elements

Germanium

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