As a narrow bandgap semiconductor, the preparation of surface passivation layers on HgCdTe film epilayers is essential in the process of device fabrication. Most new infrared detectors use the mesa structure. A stable and reproducible passivation technology which meets the surface uniform cover of the high aspect ratio mesa is particularly important. Atomic layer deposition (ALD) is a new type of accurate surface thin film preparation technique, which has several characteristics such as depositing large-area uniform films, making the film thickness control at nanometer level feasible, and lower deposition temperature. ALD-ZnS film is prepared on the HgCdTe IRFPAs chip at 65°. I-V and R-V curves are similar to that of IRFPAs with CdTe thermal passivation. This shows that ALD ZnS film has a good potential application in the passivation of high aspect ratio mesa-array HgCdTe devices.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.