Proceedings Article | 24 March 2009
KEYWORDS: Photoresist materials, Data modeling, Monte Carlo methods, Lithography, Metrology, Scanning electron microscopy, Critical dimension metrology, Semiconducting wafers, Roentgenium, Contamination
For many years, lithographic resolution has been the main obstacle in keeping the pace of transistor densification to meet
Moore's Law. For the 45 nm node and beyond, new lithography techniques are being considered, including immersion
ArF (iArF) lithography and extreme ultraviolet lithography (EUVL). As in the past, these techniques will use new types
of photoresists with the capability to print 45 nm node (and beyond) feature widths and pitches.
In a previous paper [1], we focused on ArF and iArF photoresist shrinkage. We evaluated the magnitude of shrinkage for
both R&D and mature resists as a function of chemical formulation, lithographic sensitivity, scanning electron
microscope (SEM) beam condition, and feature size. Shrinkage results were determined by the well accepted
methodology described in ISMI's CD-SEM Unified Specification [2].
A model for resist shrinkage, while derived elsewhere [3], was presented, that can be used to curve-fit to the shrinkage
data resulting from multiple repeated measurements of resist features. Parameters in the curve-fit allow for metrics
quantifying total shrinkage, shrinkage rate, and initial critical dimension (CD) from before e-beam exposure. The ability
to know this original CD is the most desirable result; in this work, the ability to use extrapolation to solve for a given
original CD value was also experimentally validated by CD-atomic force microscope (AFM) reference metrology.
Historically, many different conflicting shrinkage results have been obtained among the many works generated through
the litho-metrology community. This work, backed up by an exhaustive dataset, will present an explanation that makes
sense of these apparent discrepancies. Past models for resist shrinkage inherently assumed that the photoresist line is
wider than the region of the photoresist to be shrunk [3], or, in other words, the e-beam never penetrates enough to reach
all material in the interior of a feature; consequently, not all photoresist is affected by the shrinkage process. In actuality,
there are two shrinkage regimes, which are dependent on resist feature CD or thickness. Past shrinkage models are true
for larger features. However, our results show that when linewidth becomes less than the eventual penetration depth of
the e-beam after full shrinkage, the apparent shrinkage magnitude decreases while shrinkage speed accelerates. Thus, for
small features, most shrinkage occurs within the first measurement. This is crucial when considering the small features
to be fabricated by immersion lithography.
In this work, the results from the previous paper [1] will be shown to be consistent with numerically simulated results,
thus lending credibility to the postulations in [1].
With these findings, we can conclude with observations about the readiness of SEM metrology for the challenges of both
dry and immersion ArF lithographies as well as estimate the errors involved in calculating the original CD from the
shrinkage trend.
