Dr. Abbas Rastegar Profile

Dr. Abbas Rastegar

Sr. Director of Technology at Applied Materials Inc

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Author

Publications (31)

Proceedings Article | 12 October 2018 Presentation

Cleaning durability of the applied materials EUV mask blanks (Conference Presentation)

Abbas Rastegar, Sankesha Bhoyar , Khim Tiong Soon, Vik Banthia

Proceedings Volume 10809, 108090E (2018) https://doi.org/10.1117/12.2502808

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Ruthenium, Pellicles, Ultraviolet radiation, Chemistry, Particles, Mask cleaning, Light, Scanners

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In the absence of EUV pellicles, EUV masks need to be cleaned frequently. Even after the implementation of the pellicles, EUV masks need to be cleaned multiple times. When pellicle studs need to be removed, aggressive cleaning recipes are required to remove glue from the surface mask. Therefore, surfaces in contact with chemicals during mask cleaning should be stable against aggressive, acidic and basic chemicals. In addition to, chemical durability, EUV masks are repeatedly exposed to EUV and UV radiation. In particular, with increasing the EUV source power, it is expected that EUV mask surface be exposed to EUV light with energy densities > 5 W/cm2 as well as out-of-band radiation in UV region. Such high energy radiation can oxidize Ru cap layer or promote Ruthenium silicide formation under the capping layer. Such mechanism can result in Ruthenium peel –off by multiple cleaning of EUV masks. When acidic chemistries are used to remove particles from pattern EUV masks, absorber layer can be etched and as a result mask CD will change by multiple cleanings. During the chucking process in an EUV scanner, there might be dents form in the backside conductive layer (e.g. CrN) which results in thinning backside conductive layer in the certain areas. Meantime, more aggressive megasonic cleaning is required to remove micron size particles from the backside of the EUV masks. Combination of multiple chucking, dent formation and aggressive cleaning may result in damage in the backside film. Finally, in the EUV masks with OPC sub-resolution-assist-feature (SRAF) can be easily damaged by megasonic during cleaning. This paper will discuss cleaning durability challenges for sub 10 nm half pitch nodes when high power EUV sources expect to be used. In particular, we present our latest results of multiple cleaning of Applied Materials blanks with conventional cleaning chemistries. The change in the EUV reflectivity of Ru cap multilayers by 100x cleaning will be presented. Impact of cleaning on conventional absorber (TaN) and newly developed thin absorber films in Applied Materials will be discussed. The impact of the cleaning processes on the substrate and CrN backside conductive film will be presented. Multiple surface characterization techniques will be used for study of cleaning impact on different films.

Proceedings Article | 17 April 2014 Paper

Particle control challenges in process chemicals and ultra-pure water for sub-10nm technology nodes

Abbas Rastegar, Martin Samayoa, Matthew House, Hüseyin Kurtuldu, Sang-Kee Eah, Lauren Morse, Jenah Harris-Jones

Proceedings Volume 9048, 90480P (2014) https://doi.org/10.1117/12.2048080

KEYWORDS: Particles, Atmospheric particles, Silica, Extreme ultraviolet, Semiconducting wafers, Transmission electron microscopy, Photomasks, Aerosols, Ions, Neodymium

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Proceedings Article | 17 April 2014 Paper

Study of alternative capping and absorber layers for extreme ultraviolet (EUV) masks for sub-16nm half-pitch nodes

Abbas Rastegar, Matthew House, Ruahi Tian, Thomas Laursen, Alin Antohe, Patrick Kearney

Proceedings Volume 9048, 90480L (2014) https://doi.org/10.1117/12.2048074

KEYWORDS: Nickel, Extreme ultraviolet, Photomasks, Silicon, Ruthenium, Chemistry, Scanning probe microscopy, Extreme ultraviolet lithography, Reflectivity, Titanium dioxide

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Proceedings Article | 8 November 2012 Paper

Effect of radiation exposure on the surface adhesion of Ru-capped MoSi multilayer blanks

Göksel Durkaya, Abbas Rastegar, Hüseyin Kurtuldu

Proceedings Volume 8522, 852214 (2012) https://doi.org/10.1117/12.976060

KEYWORDS: Particles, Radiation effects, Ruthenium, Surface roughness, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Ions, Neodymium, Lamps

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Proceedings Article | 8 November 2012 Paper

Study of the Durability of the Ru-capped MoSi Multilayer Surface Under Megasonic cleaning

Hüseyin Kurtuldu, Abbas Rastegar, Matthew House

Proceedings Volume 8522, 85221Q (2012) https://doi.org/10.1117/12.976857

KEYWORDS: Acoustics, Oxygen, Carbon dioxide, Transducers, Extreme ultraviolet, Multilayers, Cavitation, Photomasks, Gases, Ruthenium

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Proceedings Article | 17 April 2012 Paper

EUV mask defects and their removal

Abbas Rastegar, Vibhu Jindal

Proceedings Volume 8352, 83520W (2012) https://doi.org/10.1117/12.923882

KEYWORDS: Extreme ultraviolet, Multilayers, Photomasks, Particles, Inspection, Extreme ultraviolet lithography, Defect detection, Reflectivity, Ruthenium, Deposition processes

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Proceedings Article | 23 March 2012 Paper

Effect of radiation on the defectivity and stability of Ru-capped MoSi multilayer blanks

Abbas Rastegar, Göksel Durkaya, Aron Cepler, Matt House, Steve Novak

Proceedings Volume 8322, 832211 (2012) https://doi.org/10.1117/12.916631

KEYWORDS: Ruthenium, Silicon, Extreme ultraviolet, Extreme ultraviolet lithography, Reflectivity, Photomasks, Oxides, Radiation effects, Scanning probe microscopy, Oxidation

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Proceedings Article | 14 October 2011 Paper

Accelerating EUV learning with synchrotron light: mask roughness challenges ahead

Patrick Naulleau, Kenneth Goldberg, Eric Gullikson, Iacopo Mochi, Brittany McClinton, Abbas Rastegar

Proceedings Volume 8166, 81660F (2011) https://doi.org/10.1117/12.900488

KEYWORDS: Photomasks, Extreme ultraviolet, Line width roughness, Atomic force microscopy, Line edge roughness, Speckle, Ruthenium, Extreme ultraviolet lithography, Scatter measurement, Synchrotrons

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Proceedings Article | 14 October 2011 Paper

Scanning probe microscopy study of the tolerance of patterned EUV masks to megasonic cleaning

Takeya Shimomura, Abbas Rastegar

Proceedings Volume 8166, 81661N (2011) https://doi.org/10.1117/12.898576

KEYWORDS: Particles, Photomasks, Extreme ultraviolet, Silica, Scanning probe microscopy, Ruthenium, Extreme ultraviolet lithography, Adhesives, Multilayers, Scanning electron microscopy

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EUV lithography (EUVL) is considered the most attractive solution for semiconductor device manufacturing beyond the 22nm half-pitch node. In EUVL, one of the greatest challenges is the lack of a pellicle, which makes EUV masks prone to particle contamination. Therefore, mask cleaning plays an important role in keeping masks clean during both fabrication in the mask shop and usage in the wafer fab. According to the International Technology Roadmap for Semiconductors (ITRS), in 2013 mask cleaning processes should remove all defects larger than 25nm without damaging 78nm and smaller patterns for the 23nm Flash half-pitch node [1]. In addition to contamination concerns, EUV masks introduce new materials and a multilayer structure that is different from the Cr on glass used in traditional optical masks. Physical forces applied by megasonic cleaning to remove particles on an optical mask could damage EUV mask patterns. Thus, it is important to determine the magnitude of the physical forces that can break absorber patterns (TaN or TaBN) from the surface of a Ru-capped MoSi multilayer film. The adhesion of particles of interest to the Ru-capped multilayer should also be measured. In the complex structure of an EUV mask, adhesion forces of particles on the top surface are modified by the different layers beneath the Ru. Hence, it is crucial to directly measure the force required to remove particles and break absorber patterns on EUV mask surfaces to determine the process window for applicable cleaning forces. We used scanning probe microscopy (SPM) to quantify these forces. The SPM probe was precisely controlled to remove particles and break patterns on Ru-capped EUV mask blanks. While being manipulated, the deflection signals of the probe were monitored and then converted to forces using a simple beam model. In this paper, we present the measured breakage forces for absorber patterns as a function of their size and compare them with removal forces for 50nm and 100nm SiO2 and polystyrenelatex (PSL) particles. Based on these data and our analysis, we will demonstrate a process window for physical force that can successfully clean EUV masks beyond the 16nm half-pitch node.

SPIE Journal Paper | 1 October 2011

Surface modification of extreme-ultraviolet lithography mask blanks by e-beam

Arun John Kadaksham, Thomas Laursen, Timothy Owen, Jon Underwood, Abbas Rastegar

JM3, Vol. 10, Issue 04, 043015, (October 2011) https://doi.org/10.1117/12.10.1117/1.3655725

KEYWORDS: Photomasks, Quartz, Monte Carlo methods, Extreme ultraviolet lithography, Scanning electron microscopy, Extreme ultraviolet, Multilayers, Electron beam lithography, Lithography, Inspection

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Proceedings Article | 20 April 2011 Paper

Surface modification of EUVL mask blanks by e-beam

Arun John Kadaksham, Thomas Laursen, Timothy Owen, Jon Underwood, Abbas Rastegar

Proceedings Volume 7971, 79710X (2011) https://doi.org/10.1117/12.879452

KEYWORDS: Scanning electron microscopy, Quartz, Monte Carlo methods, Multilayers, Inspection, Atomic force microscopy, Particles, Extreme ultraviolet lithography, Electron beams, Contamination

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Proceedings Article | 6 April 2011 Paper

Current status of EUV mask blanks and LTEM substrates defectivity and cleaning of blanks exposed in EUV ADT

Arun John Kadaksham, Byunghoon Lee, Matt House, Thomas Laursen, Brian Niekrewicz, Abbas Rastegar

Proceedings Volume 7969, 79690Z (2011) https://doi.org/10.1117/12.880757

KEYWORDS: Particles, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Mask cleaning, Ruthenium, Reflectivity, Contamination, Inspection, Atomic force microscopy

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Proceedings Article | 20 March 2010 Paper

Particle removal challenges of EUV patterned masks for the sub-22nm HP node

Abbas Rastegar, Sean Eichenlaub, Arun John Kadaksham, Byunghoon Lee, Matt House, Sungmin Huh, Brian Cha, Henry Yun, Iacopo Mochi, Kenneth Goldberg

Proceedings Volume 7636, 76360N (2010) https://doi.org/10.1117/12.847056

KEYWORDS: Particles, Extreme ultraviolet, Photomasks, Silica, Ruthenium, Scanning electron microscopy, Reflectivity, Scanning probe microscopy, Vacuum ultraviolet, Inspection

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Proceedings Article | 20 March 2010 Paper

EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

Y. David Chan, Abbas Rastegar, Henry Yun, E. Steve Putna, Stefan Wurm

Proceedings Volume 7636, 76361D (2010) https://doi.org/10.1117/12.847371

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Defect inspection, Optical inspection, Particles, Reflectivity, Manufacturing, Deep ultraviolet

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Proceedings Article | 27 May 2009 Paper

Sub-30-nm defect removal on EUV substrates

Abbas Rastegar, Sean Eichenlaub, Arun John Kadaksham, Matt House, Brian Cha, Henry Yun

Proceedings Volume 7470, 74700Z (2009) https://doi.org/10.1117/12.835197

KEYWORDS: Particles, Inspection, Extreme ultraviolet, Defect detection, Glasses, Surface finishing, Atomic force microscopy, Chemical mechanical planarization, Optical spheres, Quartz

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Proceedings Article | 27 May 2009 Paper

SEMATECH mask program

Henry Yun, Abbas Rastegar, Patrick Kearney, Kevin Orvek

Proceedings Volume 7470, 747005 (2009) https://doi.org/10.1117/12.835796

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Particles, Polishing, Surface finishing, Ion beams, Etching, Anisotropic etching, Manufacturing

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Proceedings Article | 11 May 2009 Paper

SEMATECH EUVL mask program status

Henry Yun, Frank Goodwin, Sungmin Huh, Kevin Orvek, Brian Cha, Abbas Rastegar, Patrick Kearney

Proceedings Volume 7379, 73790G (2009) https://doi.org/10.1117/12.824257

KEYWORDS: Photomasks, Particles, Extreme ultraviolet, Extreme ultraviolet lithography, Inspection, Lithography, Deposition processes, Defect inspection, Surface roughness, Manufacturing

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As we approach the 22nm half-pitch (hp) technology node, the industry is rapidly running out of patterning options. Of the several lithography techniques highlighted in the International Technology Roadmap for Semiconductors (ITRS), the leading contender for the 22nm hp insertion is extreme ultraviolet lithography (EUVL). Despite recent advances with EUV resist and improvements in source power, achieving defect free EUV mask blank and enabling the EUV mask infrastructure still remain critical issues. To meet the desired EUV high volume manufacturing (HVM) insertion target date of 2013, these obstacles must be resolved on a timely bases. Many of the EUV mask related challenges remain in the pre-competitive stage and a collaborative industry based consortia, such as SEMATECH can play an important role to enable the EUVL landscape. SEMATECH based in Albany, NY is an international consortium representing several of the largest manufacturers in the semiconductor market. Full members include Intel, Samsung, AMD, IBM, Panasonic, HP, TI, UMC, CNSE (College of Nanoscience and Engineering), and Fuller Road Management. Within the SEMATECH lithography division a major thrust is centered on enabling the EUVL ecosystem from mask development, EUV resist development and addressing EUV manufacturability concerns. An important area of focus for the SEMATECH mask program has been the Mask Blank Development Center (MBDC). At the MBDC key issues in EUV blank development such as defect reduction and inspection capabilities are actively pursued together with research partners, key suppliers and member companies. In addition the mask program continues a successful track record of working with the mask community to manage and fund critical mask tools programs. This paper will highlight recent status of mask projects and longer term strategic direction at the MBDC. It is important that mask technology be ready to support pilot line development HVM by 2013. In several areas progress has been made but a continued collaborative effort will be needed along with timely infrastructure investments to meet these challenging goals.

Proceedings Article | 18 March 2009 Paper

Nanopit smoothing by cleaning

Abbas Rastegar, Sean Eichenlaub, Arun John Kadaksham, Matt House

Proceedings Volume 7271, 72710F (2009) https://doi.org/10.1117/12.814242

KEYWORDS: Extreme ultraviolet, Particles, Etching, Photomasks, Quartz, Surface roughness, Glasses, Chemical mechanical planarization, Deposition processes, Anisotropic etching

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Proceedings Article | 1 April 2008 Paper

Sub 50 nm cleaning-induced damage in EUV mask blanks

Abbas Rastegar, Sean Eichenlaub, Vivek Kapila, Arun John Kadaksham, Pat Marmillion

Proceedings Volume 6921, 692120 (2008) https://doi.org/10.1117/12.774951

KEYWORDS: Glasses, Cavitation, Particles, Extreme ultraviolet, Surface finishing, Acoustics, Quartz, Inspection, Photomasks, Atomic force microscopy

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Proceedings Article | 16 November 2007 Paper

A method to determine the origin of remaining particles after mask blank cleaning

Vivek Kapila, Sean Eichenlaub, Abbas Rastegar, Arun John, Pat Marmillion

Proceedings Volume 6730, 67304L (2007) https://doi.org/10.1117/12.746798

KEYWORDS: Particles, Quartz, Scanning probe microscopy, Photomasks, Chemistry, Extreme ultraviolet lithography, Liquids, Mask cleaning, Ions, Vacuum ultraviolet

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Proceedings Article | 30 October 2007 Paper

The effect of size and shape of sub-50 nm defects on their detectability

Abbas Rastegar, Wonil Cho, Eric Gullikson, Sean Eichenlaub

Proceedings Volume 6730, 67305F (2007) https://doi.org/10.1117/12.746816

KEYWORDS: Particles, Gold, Inspection, Quartz, Silica, Photomasks, Optical spheres, Defect detection, Extreme ultraviolet, Atomic force microscopy

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Proceedings Article | 30 October 2007 Paper

A study of template cleaning for nano-imprint lithography

James Ellenson, Lloyd Litt, Abbas Rastegar

Proceedings Volume 6730, 67305Q (2007) https://doi.org/10.1117/12.753745

KEYWORDS: Nanoimprint lithography, Chemistry, Lithography, Polymers, Particles, Extreme ultraviolet lithography, Photomasks, Semiconductors, Ultraviolet radiation, Semiconducting wafers

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Proceedings Article | 3 May 2007 Paper

Hydrogenated water application for particle removal on EUV mask blank substrates

Sean Eichenlaub, Abbas Rastegar, Peter Dress, Fei Xu, Pat Marmillion

Proceedings Volume 6533, 653311 (2007) https://doi.org/10.1117/12.737174

KEYWORDS: Particles, Extreme ultraviolet, Hydrogen, Photomasks, Lithography, Acquisition tracking and pointing, Defect inspection, Quartz, Standards development, Inspection

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Proceedings Article | 15 March 2007 Paper

New requirements for the cleaning of EUV mask blanks

Abbas Rastegar, Sean Eichenlaub, Vivek Kapila, Arun John Kadaksham, Pat Marmillion

Proceedings Volume 6517, 65171D (2007) https://doi.org/10.1117/12.712105

KEYWORDS: Particles, Extreme ultraviolet, Quartz, Atomic force microscopy, Glasses, Inspection, Iron, Gold, Aluminum, Surface finishing

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Proceedings Article | 20 October 2006 Paper

Interaction forces on mask surfaces relevant to EUV lithography

R. Hübner, S. Eichenlaub, A. Rastegar, R. Geer

Proceedings Volume 6349, 63493E (2006) https://doi.org/10.1117/12.687175

KEYWORDS: Quartz, Photomasks, Particles, Optical spheres, Extreme ultraviolet lithography, Chromium, Chemistry, Surface roughness, Atomic force microscopy, Mask cleaning

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Proceedings Article | 20 October 2006 Paper

Cleaning of MoSi multilayer mask blanks for EUVL

Vivek Kapila, Abbas Rastegar, Yoshiaki Ikuta, Sean Eichenlaub, Pat Marmillion

Proceedings Volume 6349, 63492W (2006) https://doi.org/10.1117/12.686556

KEYWORDS: Photomasks, Particles, Multilayers, Reflectivity, Extreme ultraviolet, Extreme ultraviolet lithography, Silicon, Quartz, Deposition processes, Chemistry

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Proceedings Article | 20 October 2006 Paper

Dependency of EUV mask defects on substrate defects

Sean Eichenlaub, Abbas Rastegar, Vivek Kapila, Yoshiaki Ikuta, Pat Marmillion

Proceedings Volume 6349, 63493C (2006) https://doi.org/10.1117/12.686437

KEYWORDS: Particles, Inspection, Scanning probe microscopy, Extreme ultraviolet, Defect inspection, Multilayers, Deposition processes, Scanning electron microscopy, Atomic force microscopy, Defect detection

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Proceedings Article | 20 October 2006 Paper

Point cleaning of mask blanks for extreme ultraviolet lithography

Mike Brown, John Hartley, Sean Eichenlaub, Abbas Rastegar, Patricia Marmillion, Ken Roessler

Proceedings Volume 6349, 63492K (2006) https://doi.org/10.1117/12.686764

KEYWORDS: Atomic force microscopy, Photomasks, Extreme ultraviolet lithography, Inspection, Image processing, Extreme ultraviolet, Atomic force microscope, Coating, Particles, Image resolution

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Proceedings Article | 20 May 2006 Paper

A study of damage mechanisms during EUV mask substrate cleaning

Abbas Rastegar, Sean Eichenalub, Kurt Goncher, Pat Marmillion

Proceedings Volume 6283, 62830I (2006) https://doi.org/10.1117/12.681841

KEYWORDS: Particles, Extreme ultraviolet, Glasses, Photomasks, Quartz, Atomic force microscopy, Image processing, Chemical mechanical planarization, Surface roughness, Extreme ultraviolet lithography

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Proceedings Article | 9 November 2005 Paper

Cleaning of low thermal expansion material substrates for mask blanks in EUV lithography

Sean Eichenlaub, Sebastian Dietze, Yoshiaki Ikuta, Helmut Popp, Kurt Goncher, Pat Marmillion, Abbas Rastegar

Proceedings Volume 5992, 59923K (2005) https://doi.org/10.1117/12.658508

KEYWORDS: Particles, Quartz, Scanning probe microscopy, Defect inspection, Photomasks, Extreme ultraviolet lithography, Inspection, Surface roughness, Silica, Scanning electron microscopy

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Proceedings Article | 1 February 1998 Paper

Dynamic light scattering study of SmA-SmC*A transition in an antiferroelectric liquid crystal

A. Rastegar, Igor Musevic, Martin Copic, Theo Rasing

Proceedings Volume 3318, (1998) https://doi.org/10.1117/12.299951

KEYWORDS: Liquid crystals, Dynamic light scattering, Temperature metrology, Dispersion, Scattering, Solids, Liquids, Light scattering, Molecules, Information operations

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Showing 5 of 31 publications

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