Mr. Akihiro Konda Profile

Akihiro Konda

at The Institute of Scientific and Industrial Research

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Publications (7)

Proceedings Article | 13 November 2024 Presentation

Study of a positive and negative tone organometal chemically amplified resist for high resolution EUV single patterning

Satoshi Enomoto, Kohei Machida, Shunya Honda, Akihiro Konda, Takahiro Kozawa

Proceedings Volume PC13215, PC1321508 (2024) https://doi.org/10.1117/12.3034571

KEYWORDS: Extreme ultraviolet, Optical lithography, Chemically amplified resists, Metals, Line width roughness, Etching, Stochastic processes, Optical systems, Metrology, Metal oxides

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Proceedings Article | 12 November 2024 Poster + Paper

Study of dissolution mechanism and printability of positive tone organometallic resist with alkyl acetate developers

K. Machida, S. Enomoto, S. Honda, A. Konda, E. Nomura, T. Kozawa

Proceedings Volume 13215, 1321514 (2024) https://doi.org/10.1117/12.3034663

KEYWORDS: Polymers, Extreme ultraviolet lithography

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Proceedings Article | 1 May 2023 Presentation + Paper

Single-component silicon-based patterning materials for EUV lithography

Julius Joseph Santillan, Akihiro Konda, Motoharu Shichiri, Toshiro Itani

Proceedings Volume 12498, 1249814 (2023) https://doi.org/10.1117/12.2657889

KEYWORDS: Extreme ultraviolet lithography, Electron beam lithography, FT-IR spectroscopy, Lithography, Silicon, Film thickness

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Proceedings Article | 22 February 2021 Poster + Presentation

Effect of resist film thickness on line-and-space resist patterns on chromium nitride in electron beam lithography

Akihiro Konda, Kazumasa Okamoto, Takahiro Kozawa, Takao Tamura

Proceedings Volume 11612, 116120Y (2021) https://doi.org/10.1117/12.2584016

KEYWORDS: Chromium, Electron beam lithography, Photomasks, Silicon, Semiconducting wafers, Line width roughness, Glasses, Electron beams, Quartz, Lithography

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Proceedings Article | 20 September 2020 Presentation

Resist thickness dependence of line width roughness of chemically amplified resists used for electron beam lithography

Naoki Maeda, Akihiro Konda, Kazumasa Okamoto, Takahiro Kozawa, Takao Tamura

Proceedings Volume 11518, 115180D (2020) https://doi.org/10.1117/12.2574963

KEYWORDS: Line width roughness, Electron beam lithography, Chemically amplified resists, Photomasks, Electron beams, Scanning electron microscopy, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Electronic components

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Proceedings Article | 23 March 2020 Presentation + Paper

Mechanism of resist heating effect in chemically amplified resist

Y. Ikari, K. Okamoto, N. Maeda, A. Konda, T. Kozawa, T. Tamura

Proceedings Volume 11326, 113260G (2020) https://doi.org/10.1117/12.2551825

KEYWORDS: Polymers, Monte Carlo methods, Absorption, Chemically amplified resists, Photomasks, Temperature metrology, Ions, Lithography, Image processing, Semiconductors

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The photo-mask in lithographic process of semiconductor device has an important role to transfer the downsized target image to the wafer. Due to the development of information society, demand for semiconductor devices has been growing. In order to increase photo-mask manufacturing throughput, the current density of electron beam (EB) has been getting higher. EB exposure increases the resist temperature on mask substrate inhomogeneous depending on its current density, shot size, writing order and etc. It is known that the resist sensitivity increases with irradiated resist temperature (heating effect). So, inhomogeneous temperature increase of resist on mask substrate disturbs precise pattern formation. However, the physical or chemical mechanism of heating effect has been still unknown. Here, we examined temperature dependence of acid generation process in chemically amplified resists (CARs). Poly(4- hydroxystyrene) (PHS) and poly(4-[(tert-butoxycarbonyl)oxy]styrene-co-4-hydroxystyrene) (PTBSHS) were used as CAR resin. Monte Carlo simulation moving thermalized electron under the electric field between polymer radical cations were performed with changing the temperature. From the simulation, it was revealed that the energy increase of thermalized electron contributes to the acid yield by 0.038 %/K. Quantification of the acid yields in resist films upon exposed to EB were performed with changing the temperature by titration method using Coumarin 6 (C6) as an acid sensitive dye. The acid yield increased by 0.14 %/K in PHS film and 0.21 %/K in PTBSHS film, respectively. Both values were higher than the simulation value (0.038 %/K). Pulse radiolysis experiment was also performed to observe deprotonation of polymer radical cations at 298 and 343 K. The decay of dimer radical cation of PTBSHS became 1.6 times faster at 343 K than that at 298 K. From the results, it is suggested that the heating effect mainly caused by the temperature dependence of deprotonation rate from the radical cations of PTBSHS.

Proceedings Article | 18 March 2016 Paper

Fundamental study on dissolution behavior of poly(methyl methacrylate) by quartz crystal microbalance

Akihiro Konda, Hiroki Yamamoto, Shusuke Yoshitake, Takahiro Kozawa

Proceedings Volume 9776, 977629 (2016) https://doi.org/10.1117/12.2218965

KEYWORDS: Silicon films, Quartz, Crystals, Lithography, Line width roughness, Photoresist processing, Extreme ultraviolet, Optical filters, Polymers, Polymer thin films

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