In this research, the main problems and features of the use of carbon nanotubes for devices of modern vacuum microand nanoelectronics are considered. To improve and optimize the geometric and electrical parameters of carbon nanostructures, theoretical aspects of the growth rate of carbon nanotubes on various sublayer materials, such as Ni / Ti / Si and Fe / W / Si, were considered. It was shown that with the same parameters of formation and growth of catalytic centers and carbon nanotubes on the Ni / Ti / Si and Fe / W / Si structures, arrays with different parameters were obtained. A thermodynamic analysis of the structures was carried out, which allowed us to estimate the growth rate of the structures and identify the suitability of using structures in devices.
This paper presents а masking layer formation using the focused ion beams method on the substrate surface of its own undoped gallium arsenide for subsequent plasma chemical etching. Focused ion beam was processed to create a mask for ion-induced plasma-chemical processing. The main parameters affecting the formation of nanoscale structures such as the accelerating voltage of a focused ion beam and the etching time in the plasma are investigated. With an increase in the etching time, the depth of the structures obtained decreased from 68 to 2.5 nm. The possibility of using this method for the formation of nanoscale structures without using liquid lithography is shown.
Memristor effect in ZnO thin films was investigated. It was shown, that increase in the number of laser pulses during the formation of a thin ZnO film from 1000 to 3000 leads to increase resistance of ZnO film in the high resistance state (HRS) from 28.31±8.27 kΩ to 1943.53±123.11 kΩ and decrease resistance of ZnO film in the low resistance state (LRS) from 3.85±2.15 kΩ to 3.22±1.32 kΩ, respectively. Memristor structure fabrication technique was developed. Al2O3/TiN/ZnO/Ti memristor structure was fabricated and investigated. Resistive switching from HRS to LRS occurred at 0.4±0.1 V, and from LRS to HRS at -0.72±0.2 V. Endurance test shown that HRS is 72.41±6.22 kΩ, LRS is 1.05±0.32 kΩ. It was shown, that HRS/LRS ratio was about 69.7 at read voltage 0.3 V. As a result, Al2O3/TiN/ZnO/Ti memristor structure fabrication allowed to decrease switching voltage from 3.2±0.6 V to 0.4±0.1 V for SET, and from -3.5±1.1 V to -0.72±0.2 V for RESET, decrease current from 0.9±0.4 mA to 5.2±2.2 μA, and get less resistance dispersion, than Al2O3/TiN/ZnO structure.
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